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參數資料
| 型號： | XN04506(XN4506) |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 85K |
| 代理商： | XN04506(XN4506) |
1
Publication date: February 2004
SJJ00077BED
Composite Transistors
XN04503
(XN4503)
Silicon NPN epitaxial planar type
For amplification of low frequency output
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SC1788
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5Y
Tr2
Tr1
5
4
3
2
1
6
Note) The part number in the parenthesis shows conventional part number.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1
mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
CE
=
2 V, I
C
=
500 mA
V
CE
=
2 V, I
C
=
1 A
I
C
=
5
00 mA, I
B
=
2
0 mA
I
C
=
5
00 mA, I
B
=
5
0 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
1
Forward current transfer ratio
*
h
FE1
h
FE2
65
350
50
Collector-emitter saturation voltage
*
V
CE(sat)
0.2
0.4
V
Base-emitter saturation voltage
*
V
BE(sat)
f
T
C
ob
1.2
V
Transition frequency
150
MHz
Collector output capacitance
(Common base, input open circuited)
6
pF
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
0.5
A
Peak collector current
I
CP
1
A
Total power dissipation
P
T
T
j
T
stg
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
相關PDF資料 |
PDF描述 |
|---|---|
| XN04509(XN4509) | 複合デバイス － 複合トランジスタ |
| XN04501(XN4501) | 複合デバイス － 複合トランジスタ |
| XN04503(XN4503) | 複合デバイス － 複合トランジスタ |
| XN04504(XN4504) | Composite Device - Composite Transistors |
| XN04505(XN4505) | 複合デバイス － 複合トランジスタ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XN04509 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN04509(XN4509) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XN04556 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 100V V(BR)CEO | 20MA I(C) | SC-74 |
| XN04556(XN4556) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors |
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