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參數(shù)資料
| 型號： | XN1212 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type For switching/digital circuits |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINI PACKAGE-5 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 85K |
| 代理商： | XN1212 |
1
Publication date: February 2004
SJJ00018BED
Composite Transistors
XN01212
(XN1212)
Silicon NPN epitaxial planar type
For switching/digital circuits
■
Features
Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
UNR2212 (UN2212)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 9K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
2.90
1.9
(0.95) (0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
5
4
3
1
2
+0.20
5
10
2
Tr1
Tr2
4
1
5
3
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
V
CE
=
10 V, I
C
=
5 mA
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
50
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
0.5
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
h
FE(Small
0.2
mA
Forward current transfer ratio
h
FE
Ratio
*
60
0.50
0.99
/Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
0.25
V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
V
Input resistance
R
1
30%
22
+
30%
k
Resistance ratio
R
1
/ R
2
f
T
0.8
1.0
1.2
Transition frequency
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
50
V
Collector current
100
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
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