欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: XN5501
英文描述: Composite Device - Composite Transistors
中文描述: 復合設備-復合晶體管
文件頁數: 1/3頁
文件大小: 84K
代理商: XN5501
1
Publication date: August 2003
SJJ00089BED
Composite Transistors
XN05501
(XN5501)
Silicon NPN epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SD0601A (2SD601A)
×
2
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5L
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
50
7
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
T
j
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
ratio
*
h
FE
160
460
h
FE(Small/
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
1: Collector (Tr1)
2: Emitter (Tr2)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
0.1
(0.95)
0.16
+0.10
2
+
1
+
1
0
+
1
0
±
0
0
±
0
+
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
相關PDF資料
PDF描述
XN05531 Composite Device - Composite Transistors
XN5531 Composite Device - Composite Transistors
XN05553 Composite Device - Composite Transistors
XN5553 Composite Device - Composite Transistors
XN05531(XN5531) 複合デバイス - 複合トランジスタ
相關代理商/技術參數
參數描述
XN550786-GTN 制造商:Honeywell Sensing and Control 功能描述:Industrial Potentiometers
XN5531 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor
XN5553 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor
XN5601 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
XN5E-BV401MR 制造商:IDEC Corporation 功能描述:SWITCH EMERGENCY STOP 1NC 250VAC 制造商:IDEC Corporation 功能描述:SWITCH, EMERGENCY STOP, 1NC, 250VAC; Contact Configuration:SPST-NC; Switch Operation:On-Off; Contact Voltage DC Nom:250V; Contact Voltage AC Nom:250V; Contact Current Max:5A; Actuator Style:Mushroom; Actuator Diameter:40mm; Series:XN;RoHS Compliant: Yes 制造商:IDEC CORPORATION 功能描述:E-Stop 30mm Flush Type
主站蜘蛛池模板: 鄂伦春自治旗| 吉木乃县| 谢通门县| 五河县| 祁阳县| 观塘区| 呈贡县| 台中市| 新余市| 金堂县| 兴山县| 武穴市| 福鼎市| 婺源县| 灵寿县| 和静县| 湾仔区| 开封市| 闻喜县| 罗平县| 清河县| 个旧市| 寿阳县| 从江县| 通化市| 新化县| 扎兰屯市| 麻江县| 板桥市| 汾阳市| 黄冈市| 柳州市| 册亨县| 金堂县| 耒阳市| 开封市| 壶关县| 澎湖县| 页游| 区。| 邻水|