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參數資料
| 型號： | XP1026-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 27.0-32.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 27000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-14 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 294K |
| 代理商： | XP1026-BD-000V |
Mimix Broadband's three stage 27.0-32.0 GHz GaAs
MMIC power amplifier has a small signal gain of 22.0
dB with +33 dBm saturated output power. This MMIC
uses Mimix Broadband’s 0.15 μm GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
27.0-32.0 GHz GaAs MMIC
Power Amplifier
Ka-Band 2W Power Amplifier
22.0 dB Small Signal Gain
+33.0 dBm Saturated Output Power
+40.0 dBm Output Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
mA
Min.
27.0
-
-
-
-
-
-
-
-1.2
-
-
-
Typ.
-
10.0
15.0
22.0
+/-1.0
50.0
+33.0
+5.0
-0.9
100
250
550
Max.
32.0
-
-
-
-
-
-
+6.0
0.0
150
350
750
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
165,415,790 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 5
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2006 - Rev 23-Feb-07
P1026-BD
相關PDF資料 |
PDF描述 |
|---|---|
| XP1026-BD-EV1 | 27.0-32.0 GHz GaAs MMIC Power Amplifier |
| XP1027-BD | 27.0-33.0 GHz GaAs MMIC Power Amplifier |
| XP1027-BD-000V | 27.0-33.0 GHz GaAs MMIC Power Amplifier |
| XP1027-BD-EV1 | 27.0-33.0 GHz GaAs MMIC Power Amplifier |
| XP1028-BD | 43.5-46.5 GHz GaAs MMIC Power Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XP1026-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-32.0 GHz GaAs MMIC Power Amplifier |
| XP1027-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-31.0 GHz GaAs MMIC |
| XP1027-BD_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-31.0 GHz GaAs MMIC |
| XP1027-BD-000V | 制造商:M/A-COM TECHNOLOGY SOLUTIONS 功能描述:XP1027-BD-000V,EPOXY,TC,CW |
| XP1027-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-33.0 GHz GaAs MMIC Power Amplifier |
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