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參數資料
| 型號： | XP1027-BD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 27.0-33.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 27.0-33.0 GHz的砷化鎵單片功率放大器 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 246K |
| 代理商： | XP1027-BD-EV1 |
Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC
power amplifier has a small signal gain of 21.0 dB with +35
dBm saturated output power. The device also includes
Lange couplers to achieve good input/output return loss.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
27.0-33.0 GHz GaAs MMIC
Power Amplifier
Ka-Band 4 W Power Amplifier
Balanced Design Provides Good Input/Output Match
21.0 dB Small Signal Gain
+35.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
mA
Min.
27.0
-
-
-
-
-
-
-
-1.0
-
-
-
Typ.
-
20.0
20.0
21.0
+/-1.0
50.0
+35.0
+5.0
-0.7
250
625
1185
Max.
33.0
-
-
-
-
-
-
+6.0
0.0
300
750
1435
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
325,825,1575 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 5
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
2
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 27-Mar-07
P1027-BD
XP1027-BD
相關PDF資料 |
PDF描述 |
|---|---|
| XP1028-BD | 43.5-46.5 GHz GaAs MMIC Power Amplifier |
| XP1028-BD-000V | 43.5-46.5 GHz GaAs MMIC Power Amplifier |
| XP1028-BD-EV1 | 43.5-46.5 GHz GaAs MMIC Power Amplifier |
| XP131A1715SR | N-Channel Power MOS FET |
| XP132A0340SR | P-Channel Power MOS FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XP1027-V | 制造商:M/A-COM Technology Solutions 功能描述:MMW POWER AMPLIFIER |
| XP1028-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:43.5-46.5 GHz GaAs MMIC Power Amplifier |
| XP1028-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:43.5-46.5 GHz GaAs MMIC Power Amplifier |
| XP1028-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:43.5-46.5 GHz GaAs MMIC Power Amplifier |
| XP1031-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:37.0-42.0 GHz GaAs MMIC Power Amplifier |
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