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參數資料
| 型號： | XP1028-BD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 43.5-46.5 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 43.5-46.5 GHz的砷化鎵單片功率放大器 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 356K |
| 代理商： | XP1028-BD-EV1 |
43.5-46.5 GHz GaAs MMIC
Power Amplifier
Features
General Description
Mimix Broadband's three stage balanced 43.5 - 46.5
GHz GaAs MMIC power amplifier has a small signal
gain of 14.0 dB with a +29.0 dBm P1dB output
compression point. The device also includes Lange
couplers to achieve good input and output return
loss. This MMIC uses Mimix Broadband’s 0.15 μm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
2360 mA
+0.3 VDC
+23 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 5
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
April 2007 - Rev 17-Apr-07
P1028-BD
Excellent Saturated Output Stage
Balanced Design Provides Good Input/Output Match
14.0 dB Small Signal Gain
+29 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
XP1028-BD
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
Min.
43.5
-
-
-
-
-
-
-
-1.0
-
Typ.
-
25.0
25.0
14.0
+/-1.0
45.0
+29.0
+5.0
-0.5
1440
Max.
46.5
-
-
-
-
-
-
+5.5
0.0
2160
2
(2) Measured using constant current.
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| XP1031-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:37.0-42.0 GHz GaAs MMIC Power Amplifier |
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| XP1031-QK-0L00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:37.0-42.0 GHz GaAs Power Amplifier QFN, 7x7mm |
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