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參數資料
型號: XP5555
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN epitaxial planer transistor
中文描述: 200 mA, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-88, 6 PIN
文件頁數: 1/2頁
文件大小: 37K
代理商: XP5555
1
Composite Transistors
XP5555
Silicon NPN epitaxial planer transistor
For high speed switching
I
Features
G
Two elements incorporated into one package.
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SC4782
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
EO
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CES
V
EBO
I
C
I
CP
P
T
T
j
T
stg
25
V
Collector to emitter voltage
20
V
Emitter to base voltage
5
V
Collector current
200
mA
Peak collector current
300
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
V
CB
= 10V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
0.1
μ
A
μ
A
Emitter cutoff current
0.1
Forward current transfer ratio
40
200
Collector to emitter saturation voltage
0.17
0.25
V
Base to emitter saturation voltage
0.76
1.0
V
Transition frequency
200
500
MHz
Collector output capacitance
2
4
pF
Turn-on time
17
ns
Turn-off time
*1
15
ns
Storage time
7
ns
*1
Switching time measuring circuit
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
2.1
±
0.1
0
±
0
0
0
2
±
0
0
±
0
0
1.25
±
0.1
0.425
0.425
1
2
3
6
5
4
0.2
±
0.1
0
±
0
0
0
+
1
6
5
Tr2
Tr1
2
3
4
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