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參數資料
型號: 2N3506AL
廠商: Semicoa Semiconductor
英文描述: Silicon NPN Transistor
中文描述: 硅NPN晶體管
文件頁數: 1/2頁
文件大小: 208K
代理商: 2N3506AL
Copyright
2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 1 of 2
2N3506AL
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3506ALJ)
JANTX level (2N3506ALJX)
JANTXV level (2N3506ALJV)
JANS level (2N3506ALJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.
SEMICOA
.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
T
C
= 25
°
C unless otherwise specified
Rating
40
60
Absolute Maximum Ratings
Parameter
Symbol
V
CEO
V
CBO
Unit
Volts
Volts
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Thermal Resistance
I
C
3
1
A
P
T
5.71
5
28.6
175
W
mW/
°
C
W
mW/
°
C
°
C/W
P
T
R
θ
JA
Operating Junction Temperature
T
J
-65 to +200
°
C
Storage Temperature
T
STG
-65 to +200
°
C
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參數描述
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