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參數(shù)資料
| 型號： | 2N6659 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 中文描述： | Si, SMALL SIGNAL, FET, TO-39 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | 2N6659 |
Prelim. 4/00
2N6659
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk* Pulse width limited by maximum junction temperature.
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
Switching Regulators
Converters
Motor Drivers
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
35V
±20V
1.4A
1A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
(0.89
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6659 | TMOS SWITCHING FET TRANSISTORS |
| 2N6660JAN | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.99A的N溝道增強(qiáng)型MOSFET晶體管) |
| 2N6660X | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 2N6660 | N-Channel 60-V (D-S) Single and Quad MOSFETs |
| 2N6660 | TMOS SWITCHING FET TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6659-2 | 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 35V 1.8 OHM (JANTX SIMILAR) - Bulk |
| 2N6659-E3 | 功能描述:MOSFET 35V 1.8 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6660 | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6660 | 制造商:SOLID STATE 功能描述:MOSFET, N CH, 60V, 1.7A, TO-39 |
| 2N6660_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
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