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參數資料
| 型號： | 2N7002E |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V MOSFET(漏源電壓60V的N溝道增強型MOSFET) |
| 中文描述： | N通道60 - V MOSFET的（漏源電壓60V的的N溝道增強型MOSFET的） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 54K |
| 代理商： | 2N7002E |
2N7002E
Vishay Siliconix
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S-60753—Rev. B, 15-Feb-99 Siliconix was formerly a division of TEMIC Semiconductors
Phone (408)988-8000
FaxBack (408)970-5600
www.siliconix.com
1
N-Channel 60-V MOSFET
New Product
60
3 @ V
GS
= 10 V
250
Low On-Resistance: 3
Low Threshold: 2 V (typ)
Low Input Capacitance: 25 pF
Fast Switching Speed: 7.5 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 C)
T
A
= 25 C
I
D
250
T
A
= 70 C
190
mA
Pulsed Drain Current
A
I
DM
1300
Power Dissipation
Power Dissi ation
T
A
= 25 C
P
D
0.35
W
T
A
= 70 C
0.22
Maximum Junction-to-Ambient
R
thJA
357
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
A.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70860.
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| 2N7002K | N-Channel 60-V (D-S) MOSFET(漏源擊穿電壓60V的N溝道增強型MOSFET) |
| 2N7002VA-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002VAC | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7002E,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002E_10 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002E_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 |
| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
| 2N7002-E3 | 功能描述:MOSFET 60V 0.115A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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