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參數資料
型號: 2SA1905
元件分類: 功率晶體管
英文描述: 5 A, 50 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-8M1A, 3 PIN
文件頁數: 1/4頁
文件大小: 138K
代理商: 2SA1905
2SA1905
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1905
High-Current Switching Applications.
Low collector saturation voltage: VCE (sat) = 0.4 V (max)
High speed switching time: tstg = 1.0 μs (typ.)
Complementary to 2SC5076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Base current
IB
1
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
相關PDF資料
PDF描述
2SA1905-Y 5 A, 50 V, PNP, Si, POWER TRANSISTOR
2SA1923 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1924 0.5 A, 400 V, PNP, Si, POWER TRANSISTOR
2SA1924 Si, POWER TRANSISTOR
2SA1926 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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