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參數資料
| 型號： | 2SA1961 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 70 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MT2, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SA1961 |
1
Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
I
Features
G
High collector to emitter voltage V
CEO
.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–200
–200
–5
– 0.1
–70
1
150
–55 ~ +150
Unit
V
V
V
A
mA
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –100
μ
A, I
B
= 0
I
E
= –1
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –5V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–200
–5
30
typ
30
7
max
150
–2.5
Unit
V
V
–
V
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
*1
h
FE
Rank classification
Rank
P
Q
h
FE
30 ~ 100
60 ~ 150
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2
±
0.1
0.65
0.45
0.1
+
–
Note:In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
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相關代理商/技術參數 |
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| 2SA19610QAHW | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA19620TU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 2SA1962-O | 功能描述:兩極晶體管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1962-O(Q) | 功能描述:兩極晶體管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1962-O(Q,T) | 功能描述:兩極晶體管 - BJT Transistor PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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