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參數資料
型號: 2SA2058
元件分類: 小信號晶體管
英文描述: 1500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: 2-3S1A, 3 PIN
文件頁數: 1/4頁
文件大?。?/td> 149K
代理商: 2SA2058
2SA2058
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2058
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 200 to 500 (IC = 0.2 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
7
V
DC
IC
1.5
Collector current
Pulse
ICP
2.5
A
Base current
IB
150
mA
DC
500
Collector power
dissipation
t
= 10 s
PC
(Note)
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
相關PDF資料
PDF描述
2SA2069 1500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2081 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2082 50 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2097 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2110 0.5 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-126
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