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參數資料
| 型號： | 2SA2192 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 中文描述： | 進步黨硅外延平面晶體管大電流開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | 2SA2192 |
2SA2192
No. A0307-1/4
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
V
V
V
V
A
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
--50
--50
--50
--8
--10
--13
--2
0.95
20
150
PW
≤
100
μ
s
Collector Dissipation
PC
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--1A
VCE=--5V, IC=--1A
VCB=--10V, f=1MHz
IC=--5A, IB=--250mA
IC=--5A, IB=--250mA
--10
--10
560
μ
A
μ
A
200
130
90
--290
--0.93
MHz
pF
mV
V
--580
--
1.4
Continued on next page.
Ordering number : ENA0307
71206 / 42506EA MS IM TB-00002245
2SA2192
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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