- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33433 > 2SB1269Q (SANYO SEMICONDUCTOR CO LTD) 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SB1269Q |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220MF, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 36K |
| 代理商： | 2SB1269Q |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Type Silicon Transistors
High-Current Switching Applications
Ordering number:ENN2265A
2SB1269/2SD1905
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/O1598HA (KT)/D251MH/4177TA, TS No.2265–1/4
Package Dimensions
unit:mm
2049C
[2SB1269/2SD1905]
C
Electrical Characteristics at Ta = 25C
Applications
Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Features
Suitable for sets whose height is restricted.
Low collector to emitter saturation voltage.
Wide ASO and highly resistant to breakdown.
( ) : 2SB1269
Specifications
Absolute Maximum Ratings at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
6
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
5
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
7
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
2
1
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
5
6
.
1W
0
4W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
4
)
–
(
=
E 0
=1
.
0
)
–
(A
m
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=1
.
0
)
–
(A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
)
–
(
=
C
A
1
)
–
(
=
*
0
7*
0
8
2
h E
F 2V E
C
I
,
V
2
)
–
(
=
C
A
5
)
–
(
=
0
3
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
)
–
(
=
C
A
1
)
–
(
=
0
1z
H
M
* : The 2SB1269/2SD1905 are classified by 1A hFE as follows :
Continued on next page.
k
n
a
RQ
R
S
h E
F
0
4
1
o
t
0
70
0
2
o
t
0
10
8
2
o
t
0
4
1
10.2
20.9
11.5
9.4
0.8
1.6
1.2
0.9
11.0
8.8
4.5
1.3
0.4
2.55
2.7
12
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1905R | 7 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1922 | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD1934P | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD1938(F)S | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1938S | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1269R-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 7A TO-220MF |
| 2SB1274 | 制造商:n/a 功能描述:2SB1274 N9H1D |
| 2SB1274R | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1274S | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1275TLP | 功能描述:兩極晶體管 - BJT PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。