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參數資料
| 型號： | 2SB1559 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) |
| 中文描述： | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | 2SB1559 |
46
h
FE
Rank O(5000to12000), P(6500to20000), Y(15000to30000)
B
E
C
(70
)
I
C
–V
CE
Characteristics
(Typical)
–25mA
–2.0mA
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–8
–2
–4
–6
Collector-Emitter Voltage V
CE
(V)
C
C
(
–0A
–1.8mA
–1.5mA
–1.3mA
–1.0mA
–0.8mA
–0.5mA
I
B
=–0.3mA
0
–3
–2
–1
–1
–0.5
–10
–5
–200
–100
–50
Base Current I
B
(mA)
C
C
(
–6A
–8A
I
C
=–4A
0
–8
–6
–2
–4
0
–3
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
15CCsTm
2CCeep
–0.2
–1
–0.5
–8
–5
2,000
5,000
10,000
40,000
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
Typ
(V
CE
=–4V)
–0.2
–1
–5
–0.5
–8
Collector Current I
C
(A)
1000
5000
10000
50000
D
F
125C
25C
–30C
0.2
0.5
4
1
1
10
50
5
100
500 1000 2000
Time t(ms)
T
θ
j
(
0.02
0.1
0.05
0.5
1
5
8
0
40
60
20
100
80
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
–10
–50
–5
–2
–100
–200
–0.05
–1
–0.5
–0.1
–10
–20
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
80
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Safe Operating Area
(Single Pulse)
θ
j-a
–t
Characteristics
f
T
–I
E
Characteristics
(Typical)
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2389)
Application :
Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1559
–160
–150
–5
–8
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1559
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
65
typ
160
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–6A
I
C
=–6A, I
B
=–6mA
I
C
=–6A, I
B
=–6mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Darlington
2S B1559
(Ta=25°C)
(Ta=25°C)
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(
)
10
I
C
(A)
–6
V
(V)
5
I
(mA)
6
t
on
(
μ
s)
0.7typ
t
stg
(
μ
s)
3.6typ
t
f
(
μ
s)
0.9typ
I
(mA)
–6
V
(V)
–10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Equivalent circuit
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1559LD/OPY/ | 制造商:JVC Worldwide 功能描述:SI.TRANSISTOR |
| 2SB1560 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 150V 10A 3-Pin(3+Tab) TO-3P Box 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 150V 10A 3-Pin(3+Tab) TO-3P Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP AUDIO/GP MT-100 TO-3P 制造商:Allegro MicroSystems 功能描述:DARLINGTON TRANSISTOR TO-3P 制造商:Allegro MicroSystems 功能描述:DARLINGTON TRANSISTOR, TO-3P 制造商:Allegro MicroSystems 功能描述:TRANSISTOR,BJT,DARLINGTON,PNP,150V V(BR)CEO,10A I(C) |
| 2SB1560 | 制造商:Allegro MicroSystems 功能描述:TRANSISTOR DARLINGTON TO-3P |
| 2SB1561T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1561T100Q | 功能描述:兩極晶體管 - BJT PNP 60V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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