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參數資料
| 型號： | 2SB1560 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) |
| 中文描述： | 10 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | 2SB1560 |
47
h
FE
Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Darlington
2S B1560
I
C
–V
CE
Characteristics
(Typical)
–2.5mA
–2.0mA
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–10
–8
–2
–4
–6
Collector-Emitter Voltage V
CE
(V)
C
C
(
–0A
–1.5mA
–1.0mA
–1.2mA
–0.8mA
–0.6mA
I
B
=–0.4mA
0
–3
–2
–1
–1
–0.5
–10
–5
–200
–100
–50
Base Current I
B
(mA)
C
C
(
–7A
–10A
I
C
=–5A
0
–10
–8
–6
–2
–4
0
–2.5
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
1Cem
2 se)
–CaTp
1,000
10,000
40,000
5,000
–0.2
–0.5
–1
–5
–10
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
Typ
(V
CE
=–4V)
–0.2
–1
–0.5
–5
–10
500
1000
5000
10000
50000
Collector Current I
C
(A)
D
F
125C
25C
–30C
0.1
1
3
0.5
1
5
10
50 100
500 1000 2000
Time t(ms)
T
θ
j
(
0.02
0.1
0.05
0.5
1
5
10
0
40
60
20
100
80
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
10ms
–10
–50
–5
–3
–100
–200
–0.05
–0.1
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
100ms
Without Heatsink
Natural Cooling
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Safe Operating Area
(Single Pulse)
θ
j-a
–t
Characteristics
f
T
–I
E
Characteristics
(Typical)
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2390)
Application :
Audio, Series Regulator and General Purpose
External Dimensions
MT-100(TO3P)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1560
–160
–150
–5
–10
–1
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
fr
C
OB
2SB1560
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
50
typ
230
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–7A
I
C
=–7A, I
B
=–7mA
I
C
=–7A, I
B
=–7mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–70
R
L
(
)
10
I
C
(A)
–7
V
(V)
5
I
(mA)
7
t
on
(
μ
s)
0.8typ
t
stg
(
μ
s)
3.0typ
t
f
(
μ
s)
1.2typ
I
(mA)
–7
V
(V)
–10
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
E
C
(70
)
Equivalent circuit
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