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參數資料
| 型號： | 2SB1682 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-16C1A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 461K |
| 代理商： | 2SB1682 |
2SB1682
2006-11-21
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor)
2SB1682
○
Power Amplifier Applications
○
High-Power Switching Applications
High-breakdown voltage: VCEO = 160 V (min)
Complementary to 2SD2636
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
DC
IC
8
Collector current
Pulse
ICP
15
A
Base current
IB
1
A
Collector power dissipation
PC
100
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Base
Emitter
≈ 30
Collector
1.Base
2.Collector(heatsink)
3.Emitter
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相關代理商/技術參數 |
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