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參數(shù)資料
| 型號： | 2SC2362H |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | NP, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2SC2362H |
2SA1016, 1016K / 2SC2362, 2362K
No.0572-1/5
Specifications ( ) : 2SA1016, 1016K
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
2SA1016, 2SC2362
2SA1016K, 2SC2362K
Unit
Collector-to-Base Voltage
VCBO
(--)120
(--)150
V
Collector-to-Emitter Voltage
VCEO
(--)100
(--)120
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)50
mA
Collector Current (Pulse)
ICP
(--)100
mA
Collector Dissipation
PC
400
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)80V, IE=0A
(--)1.0
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1.0
μA
DC Current Gain
hFE
VCE=(--)6V, IC=(--)1mA
160*
960*
Gain-Bandwidth Product
fT
VCE=(--)6V, IC=(--)1mA
(110)130
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(2.2)1.8
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)10mA, IB=(--)1mA
(--)0.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A [2SA1016, 2SC2362]
(--)120
V
IC=(--)10μA, IE=0A [2SA1016K, 2SC2362K]
(--)150
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞ [2SA1016, 2SC2362]
(--)100
V
IC=(--)1mA, RBE=∞ [2SA1016K, 2SC2362K]
(--)120
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)5
V
Continued on next page.
* : The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA hFE as follows :
Rank
F
G
H
hFE
160 to 320
280 to 560
480 to 960
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN0572F
71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1016, 1016K
2SC2362, 2362K
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Low-Noise Amp
Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC2371-BP | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SC2383-O | 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2383R | 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2383-R | 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2383-Y | 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2362K | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Low-Noise Amp Applications |
| 2SC2362K_08 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Low-Noise Amp Applications |
| 2SC2362KF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SC2362KG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SC2362KH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 |
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