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參數資料
| 型號： | 2SC5197-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | 2-16C1A, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 120K |
| 代理商： | 2SC5197-O |
2SC5197
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5197
Power Amplifier Applications
Complementary to 2SA1940
Suitable for use in 55-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
8
A
Base current
IB
0.8
A
Collector power dissipation
(Tc = 25°C)
PC
80
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
―
5.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
120
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
―
160
DC current gain
hFE (2)
VCE = 5 V, IC = 4 A
35
75
―
Collector-emitter saturation voltage
VCE (sat)
IC = 6 A, IB = 0.6 A
―
0.35
2.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 4 A
―
0.95
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
30
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
120
―
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5197 | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SC5198-O | 10 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SC519A | 7 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2SC5200LR | 15 A, 230 V, NPN, Si, POWER TRANSISTOR |
| 2SC5200L | 15 A, 230 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5197-O(Q) | 制造商:Toshiba 功能描述:NPN 120V 8A 80 to 160 TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor 制造商:Toshiba 功能描述:Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3PN |
| 2SC5197R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SC5197-R(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5198 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| 2SC5198_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications |
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