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參數資料
| 型號： | 2SC5420 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Inverter Lighting Applications |
| 中文描述： | 變頻器照明應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | 2SC5420 |
2SC5420
Ordering number : EN5762
Inverter Lighting Applications
NPN Triple Diffused Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-1037 No.5762-1/4
Package Dimensions
unit: mm
2069B-SMP-FD
[2SC5420]
SANYO : SMP-FD
1 : Base
2 : Collector
3 : Emitter
10.2
2.55
2.55
1
1.3
4.5
1
2
3
8
3
1.2
0.8
2
0.4
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°C
°C
1000
450
9
5
10
1.75
50
150
Tc=25°C
Junction Temperature
Storage Temperature
Tj
Tstg
–55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
max
10
1.0
Unit
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
ICBO
ICES
VCEO(SUS)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
VCB=450V, IE=0
VCE=1000V, RBE=0
IC=100mA, IB=0
VEB=9V, IC=0
IC=2.5A, IB=0.5A
IC=2.5A, IB=0.5A
VCE=5V, IC=0.3A
VCE=5V, IC=2.0A
IC=2.5A, IB1=0.5A, IB2=–1.0A
IC=2.5A, IB1=0.5A, IB2=–1.0A
μA
mA
V
mA
V
V
450
1.0
1.0
1.5
50
30
10
40
Storage Time
Fall Time
2.5
0.15
μs
μs
Features
High breakdown voltage (VCBO=1000V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
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