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參數資料
| 型號： | 2SC5574E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220FN, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 52K |
| 代理商： | 2SC5574E |
2SC5574
Transistors
Power Transistor (80V, 4A)
2SC5574
!Features
1) Low saturation voltage.
(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25
°C)
4) Wide SOA (safe operating area).
5) Complements the 2SA2017.
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
80
6
4
2
30
150
55 +150
Unit
V
A(DC)
6
A(Pulse)
W
W(Tc
=25°C)
°C
Single pulse,
Pw
=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
!External dimensions
(Units : mm)
ROHM : TO-220FN
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
0.75
0.8
2.54
(1)
(3)
(2)
(1)
2.54
(3)
(2)
5.0
8.0
14.0
15.0
12.0
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!Packaging specifications and hFE
Type
2SC5574
TO-220FN
EFG
500
Package
hFE
Code
Basic ordering unit (pieces)
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
100
80
6
100
10
60
10
1
500
V
A
V
MHz
pF
IC
= 50A
IC
= 25mA
IE
= 50A
VCB
= 100V
VEB
= 6V
IC/IB
= 2A/0.2A
VBE(sat)
1.5
VIC/IB
= 2A/0.2A
VCE/IC
= 4V/1A
VCE
= 12V , IE = 0.2A , f = 5MHz
VCB
= 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current
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相關代理商/技術參數 |
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|---|---|
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