欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SC5856
元件分類: 功率晶體管
英文描述: 14 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: 2-16E3A, 3 PIN
文件頁數: 1/6頁
文件大?。?/td> 196K
代理商: 2SC5856
2SC5856
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage
: VCBO = 1500 V
Low Saturation Voltage
: VCE (sat) = 3 V (max)
High Speed
: tf(2) = 0.1 μs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1500
V
CollectorEmitter Voltage
VCEO
700
V
EmitterBase Voltage
VEBO
5
V
DC
IC
14
Collector Current
Pulse
ICP
28
A
Base Current
IB
7
A
Collector Power Dissipation
PC
55
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
相關PDF資料
PDF描述
2SC5857 21 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5858 22 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5868TLR 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5874STPR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5886 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SC5858 制造商:Distributed By MCM 功能描述:1700V 22A 200W Bce Toshiba Transistor 2-21F2A
2SC5858(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC5859(Q) 制造商:Toshiba 功能描述:NPN Cut Tape
2SC58630QL 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC5865 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3,
主站蜘蛛池模板: 尼玛县| 武宣县| 寿阳县| 巨野县| 三原县| 定州市| 山阴县| 府谷县| 商南县| 江北区| 宁明县| 奉贤区| 通辽市| 芒康县| 呼玛县| 山阳县| 洪泽县| 宾阳县| 卓资县| 胶州市| 泸州市| 吉木乃县| 水富县| 施甸县| 临潭县| 江阴市| 确山县| 翁源县| 龙陵县| 昭觉县| 新和县| 临沧市| 巴塘县| 茌平县| 方正县| 平安县| 南华县| 清远市| 泗阳县| 安顺市| 顺昌县|