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參數(shù)資料
| 型號(hào)： | 2SC6044 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 34K |
| 代理商： | 2SC6044 |
2SC6044
No.8251-1/4
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT process.
Low collector-to-emitter saturation voltage.
High current capacity.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
40
V
Collector-to-Emitter Voltage
VCEO
30
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
2A
Collector Current (Pulse)
ICP
5A
Base Current
IB
400
mA
Collector Dissipation
PC
Mounted on a ceramic board (450mm2!0.8mm)
1.3
W
Tc=25
°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=30V, IE=0
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
A
DC Current Gain
hFE1VCE=2V, IC=100mA
200
560
hFE2VCE=2V, IC=1.5A
65
Gain-Bandwidth Product
fT
VCE=10V, IC=300mA
400
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
12
pF
Marking : HB
Continued on next page.
Ordering number : ENN8251
31005EA TS IM TB-00001242
2SC6044
NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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| 2SC6079 | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6046 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC6046_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC605 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN SILICON TRANSISTOR |
| 2SC6053 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC6053_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
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