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參數資料
| 型號： | 2SD1857TV2R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ATV, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 158K |
| 代理商： | 2SD1857TV2R |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.E
Power Transistor (120V, 2A)
2SD1857
Features
Dimensions (Unit : mm)
1) High breakdown voltage. (BVCEO = 120V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency. (fT = 80MHz)
4) Complements the 2SB1236.
Packaging specifications and hFE
Package
Code
Taping
Basic ordering unit (pieces)
2SD1857
QR
TV2
2500
Type
hFE
120 to 270
hFE
Item
Q
180 to 390
R
hFE
values are classified as follows:
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
120
5
2
3
1
150
55 to +150
Unit
V
A
W
1
2
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Single pulse Pw = 10ms
2 When mounted on 1.7mm thick PCB having collector foll dimensions 1cm
2
or more.
Electrical characteristics (Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
120
5
80
20
1
2
V
μA
V
MHz
pF
IC = 50
μA
IC = 1mA
IE = 50
μA
VCB = 100V
VEB = 4V
IC/IB = 1A/0.1A
hFE
120
390
VCE/IC = 5V/0.1A
VCE = 5V , IE =
0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current
transfer ratio
Measured using pulse current.
ROHM : ATV
2SD1857
(2) Collector
(3) Base
Taping specifications
(1) Emitter
0.45
1.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
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| 2SD1858 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB P-2SD1858R |
| 2SD1858R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1858TV2P | 功能描述:兩極晶體管 - BJT DVR NPN 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1858TV2Q | 功能描述:兩極晶體管 - BJT DVR NPN 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1858TV2R | 功能描述:兩極晶體管 - BJT DVR NPN 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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