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參數資料
| 型號： | 2SD2051 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type Darlington(For low-frequency amplification) |
| 中文描述： | 1.6 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, SC-67, FULL PACK-3 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SD2051 |
1
Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
I
Features
G
High foward current transfer ratio h
FE
G
Incorporating a built-in zener diode
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
±
10
60
±
10
5
2.5
1.6
12
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 1.0A
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, I
B
= 1.0mA
V
CE
= 10V, I
C
= 10mA, f = 200MHz
min
50
50
5
4000
200
typ
max
1
1
70
70
40000
1.5
2.2
Unit
μ
A
μ
A
V
V
V
V
V
MHz
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
4000 to 10000 8000 to 20000
16000 to 40000
T
C
=25
°
C
Ta=25
°
C
Unit: mm
4.2
±
0.2
Internal Connection
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4
±
0
φ
3.1
±
0.1
B
E
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2051Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1.6A I(C) | SOT-186 |
| 2SD2051R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1.6A I(C) | SOT-186 |
| 2SD2051S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1.6A I(C) | SOT-186 |
| 2SD2052 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SD2052P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 9A I(C) | TO-247VAR |
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