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參數資料
| 型號： | 2SD2416 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type darlington(For low-frequency amplification) |
| 中文描述： | 1000 mA, 85 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-62, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 51K |
| 代理商： | 2SD2416 |
1
Transistor
2SD2416
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
I
Features
G
High foward current transfer ratio h
FE
.
G
60V zener diode built in between collector and base.
G
Darlington connection.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
+25
60
–10
60
–10
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 10V, I
C
= 1.0A
*
I
C
= 1.0A, I
B
= 1.0mA
*
I
C
= 1.0A, I
B
= 1.0mA
*
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
50
50
6500
typ
150
max
1
2
85
85
40000
1.8
2.2
Unit
μ
A
mA
V
V
V
V
MHz
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Internal Connection
B
C
E
Marking symbol :
1T
+25
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相關代理商/技術參數 |
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