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參數資料
| 型號： | 2SD2642 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | FM20, TO-220F, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 28K |
| 代理商： | 2SD2642 |
161
.
Darlington
2SD2642
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
θj-a–t Characteristics
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
Safe Operating Area (Single Pulse)
f T– I E Characteristics (Typical)
0
2
4
6
26
4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
I B=0.1mA
5mA
1mA
0.5mA
0.4mA
0.3mA
0.2mA
Collector Current I C(A)
DC
Current
Gain
h
FE
0.5
0.3
1
4
1
1 0
100
1000
5
5 0
500
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
30
20
10
2
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
10ms
10
50
5
3
100
200
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
DC
100ms
Base Current I B(mA)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
Collector Current I C(A)
DC
Current
Gain
h
FE
–0.02
–0.1
–1
–6
0
40
20
80
60
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=12V)
Emitter Current I E(A)
Typ
Without Heatsink
Natural Cooling
0
3
2
1
0.1
1
0.5
10
5
100
50
I C=5A
I C=3A
0.01
0.1
0.5
1
6
5
1000
500
100
5000
10000
50000
(V CE=4V)
0
6
4
2
0
2.5
2
1
(V CE=4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
0.01
0.1
0.5
1
6
5
1000
500
100
5000
10000
50000
(V CE=4V)
125C
25C
–30C
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
110
5
6
1
30(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
100max
110min
5000min
2.5max
3.0max
60typ
55typ
Unit
A
V
MHz
pF
Conditions
VCB=110V
VEB=5V
IC=30mA
VCE=4V, IC=5A
IC=5A, IB=5mA
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
(Ta=25°C)
External Dimensions FM20(TO220F)
3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c0.5
2.4±0.2
0.45
+0.2
-0.1
BE
C
a
b
Weight : Approx 2.0g
a. Part No.
b. Lot No.
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
30
RL
(
)
6
IC
(A)
5
VBB2
(V)
–5
IB2
(mA)
–5
ton
(
s)
0.8typ
tstg
(
s)
6.2typ
tf
(
s)
1.1typ
IB1
(mA)
5
VBB1
(V)
10
B
C
E
(70
)
Equivalent circuit
hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
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相關代理商/技術參數 |
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| 2SD2652T106 | 功能描述:兩極晶體管 - BJT NPN 12V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| 2SD2653TL | 功能描述:兩極晶體管 - BJT NPN 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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