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參數(shù)資料
| 型號(hào)： | 2SJ0163 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | For General Switching |
| 中文描述： | 20 mA, 65 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封裝： | ROHS COMPLIANT, SC-59, MINI3-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 47K |
| 代理商： | 2SJ0163 |
1
Publication date: January 2002
SJF00001BED
Silicon Junction FETs (Small Signal)
2SJ0163
(2SJ163)
Silicon P-Channel Junction FET
For general switching
Complementary to 2SK1103
I
Features
G
Low ON-resistance
G
Low-noise characteristics
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
I
Absolute Maximum Ratings
(T
a
=
25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
20
10
150
150
55 to
+
150
Unit
V
mA
mA
mW
°
C
°
C
I
Electrical Characteristics
(T
a
=
25
°
C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
iss
C
rss
Conditions
V
DS
=
10 V, V
GS
= 0
V
GS
= 30 V, V
DS
= 0
I
G
= 10
μ
A, V
DS
= 0
V
DS
=
10 V, I
D
=
10
μ
A
V
DS
=
10 V, I
D
=
1 mA, f = 1 kHz
V
DS
=
10 mV, V
GS
= 0
V
DS
=
10 V, V
GS
= 0, f = 1 MHz
min
0.2
65
1.8
max
6
10
3.5
Unit
mA
nA
V
V
mS
pF
pF
*
I
DSS
rank classification
Marking Symbol (Example): 4M
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
typ
1.5
2.5
300
12
4
Runk
I
DSS
(mA)
Marking Symbol
O
0.2 to
1
4MO
P
0.6 to
1.5
4MP
Q
1 to
3
4MQ
R
2.5 to
6
4MR
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ0163(2SJ163) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal FETs - Junction FETs |
| 2SJ01630RL | 功能描述:JFET P-CH 65V 10MA MINI-3 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類(lèi)型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SJ0164 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Switching |
| 2SJ0164(2SJ164) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號(hào)デバイス － 小信號(hào)FET － 接合形FET |
| 2SJ01640RA | 功能描述:JFET P-CH 65V 20MA NS-B1 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類(lèi)型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
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