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參數資料
| 型號： | 2SJ669 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 231K |
| 代理商： | 2SJ669 |
2SJ669
2004-08-18
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (UMOS III)
2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications
4-V gate drive
Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode: Vth = 0.8 to 2.0 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse(Note 1)
IDP
20
A
Drain power dissipation
PD
1.2
W
Single-pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
0.12
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
104
°C / W
Note 1: The channel temperature should not exceed 150℃ during use.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
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相關代理商/技術參數 |
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| 2SJ669_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Relay Drive, DC/DC Converter and Motor Drive |
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| 2SJ676 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
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