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參數(shù)資料
型號(hào): 2SJ680
元件分類: JFETs
英文描述: 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-7J2B, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 211K
代理商: 2SJ680
2SJ680
2004-12-24
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)
2SJ680
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
Enhancement model: Vth = 1.5 ~ 3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 k)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.5
Drain current
Pulse
(Note 1)
IDP
10
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25.2 mH, IAR = 2.5 A RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
0.6±0.15
0.8 MAX.
2.
3±
0.
123
1.1 MAX.
0.6±0.15
0.6 MAX
0.6 MAX.
1.1±0.2
6.5±0.2
5.
5±
0.
1.
5±
0.
2.3
5.
5.2±0.2
0.9
4.
±
0.
1.
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