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參數資料
| 型號： | 2SJ687 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | MP-3ZK, TO-252, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 161K |
| 代理商： | 2SJ687 |
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MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
Low on-state resistance
RDS(on)1 = 7.0 m
Ω MAX. (VGS = 4.5 V, ID = 10 A)
RDS(on)2 = 9.0 m
Ω MAX. (VGS = 3.0 V, ID = 10 A)
RDS(on)3 = 20 m
Ω MAX. (VGS = 2.5 V, ID = 10 A)
2.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SJ687-ZK-E1-AY
Note
2SJ687-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
0.27 g TYP.
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
m20
A
Drain Current (pulse)
Note1
ID(pulse)
m60
A
Total Power Dissipation (TC = 25
°C)
PT1
36
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
20
A
Single Avalanche Energy
Note2
EAS
40
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 10 V, RG = 25 Ω, VGS = 12 → 0 V
(TO-252)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E1-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK0601G | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK0620 | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ687-ZK-E1-AY | 功能描述:MOSFET P-CH -20V -20A TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SJ687-ZK-E2-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ73 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 5MA I(DSS) |
| 2SJ74 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
| 2SJ74_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Low Noise Audio Amplifier Applications |
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