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參數資料
| 型號： | 2SK0601G |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER, MINIP3-F2, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 209K |
| 代理商： | 2SK0601G |
Silicon MOSFETs (Small Signal)
1
Publication date: September 2007
SJF00075AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK0601G
Silicon N-channel MOSFET
For switching circuits
■ Features
Low drain-souce ON resistance R
DS(on)
High-speed switching
Allowing to be driven directly by CMOS and TTL
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
IDS
= 100 A, V
GS
= 080
V
Drain-source cutoff current
IDSS
VDS = 60 V, VGS = 010
A
Gate-source cutoff current
IGSS
VGS = 20 V, VDS = 0
0.1
A
Gate threshold voltage
Vth
ID
= 1 mA, V
DS
= V
GS
1.5
3.5
V
Drain-source ON resistance *
1
RDS(on)
ID = 0.5 A, VGS = 10 V
2
4
Forward transfer admittance
Y
fs
ID = 0.2 A, VDS = 15 V, f = 1 kHz
300
mS
Short-circuit forward transfer
Ciss
VDS
= 10 V, V
GS
= 0, f = 1 MHz
45
pF
capacitance (Common source)
Short-circuit output capacitance
Coss
30
pF
(Common source)
Reverse transfer capacitance
Crss
8pF
(Common source)
Turn-on time *
2
ton
15
ns
Turn-off time *
2
toff
20
ns
Parameter
Symbol
Rating
Unit
Drain-source voltage
VDS
80
V
Gate-source voltage (Drain open)
VGSO
20
V
Drain current
ID
0.5
A
Peak drain current
IDP
1.0
A
Power dissipation *
PD
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: ton , toff measurement circuit
Note) *: PC board: Copper foil of the drain portion should have a area of
1 cm2 or more and the board thickness should be 1.7 mm.
VOUT
VDD = 30 V
VIN = 10 V
t
= 1 s
f
= 1 kHz
50
68
VIN
90%
10%
VOUT
ton
toff
V
■ Package
Code
MiniP3-F2
Pin Name
1: Gate
2: Drain
3: Source
■ Marking Symbol: O
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SK0601G0L | 功能描述:MOSFET N-CH 80V .5A MINIP-3 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK0614 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For switching |
| 2SK0614(2SK614) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號FET － MOS FET |
| 2SK0615 | 功能描述:MOSFET N-CH 80V 500MA 3-SIP RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK0615(2SK615) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號FET － MOS FET |
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