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參數資料
| 型號： | 2SK0065P |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應| N溝道| 12V的五（巴西）直| 40uA的我（直）| SPAKVAR |
| 文件頁數： | 1/3頁 |
| 文件大小： | 194K |
| 代理商： | 2SK0065P |
241
FET (
)
unit: mm
2SK0065
(2SK65)
N
I
G
G
·
1: Drain
2: Gate
3: Source
NS-B1 Package
I
(Ta = 25°C)
·
·
·
·
·
V
DSO
V
GDO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
12
12
2
2
2
20
10 ~ +70
20 ~ +150
V
V
mA
mA
mA
mW
°C
°C
I
(Ta = 25°C)
·
I
DSS*
g
m
NV
G
V1*
G
V2*
G
V3*
V
DS
= 4.5V, V
GS
= 0, R
S
= 2.2k
± 1%
V
DS
= 4.5V, V
GS
= 0
R
S
= 2.2k
± 1%, f = 1kHz
V
DS
= 4.5V, R
S
= 2.2k
± 1%
C
G
= 10pF, A-curve
V
DS
= 4.5V, R
S
= 2.2k
± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 12V, R
S
= 2.2k
± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 1V, R
S
= 2.2k
± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
0.04
300
0.8
4
mA
μ
S
μ
V
dB
dB
dB
*
I
DSS
G
V
500
10
9.5
11
I
DSS
(mA)
G
V1
(dB)
G
V2
(dB)
| G
V1
G
V2
| (dB)
P
0.04 ~ 0.2
>
13
>
12
< 3
Q
0.15 ~ 0.8
>
12
>
11
< 3
) ( )
,
4.0
±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
2
3
1
+0.10
–
0.45
0.10
–
7
3
±
(
(
1
±
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK0065Q | TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR |
| 2SK0123(2SK123) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK0198(2SK198) | 2SK0198 (2SK198) - N-Channel Junction FET |
| 2SK032 | |
| 2SK0374(2SK374) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK0065Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR |
| 2SK0123 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
| 2SK0123(2SK123) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal FETs - Junction FETs |
| 2SK0198 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Low-Frequency Amplification |
| 2SK0198(2SK198) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK0198 (2SK198) - N-Channel Junction FET |
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