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參數資料
型號: 2SK2445
元件分類: JFETs
英文描述: 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, 3 PIN
文件頁數: 1/6頁
文件大?。?/td> 757K
代理商: 2SK2445
2SK2445
2006-11-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2445
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 14 m (typ.)
High forward transfer admittance
: |Yfs| = 40 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
50
A
Drain current
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
683
mJ
Avalanche current
IAR
50
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.0
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 371 μH, RG = 25 , IAR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相關PDF資料
PDF描述
2SK246-Y N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK246-BL N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK2462 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2467-Y 9 A, 180 V, N-CHANNEL, Si, POWER, MOSFET
2SK2477 10 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
2SK2445_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2446 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET
2SK2446-01L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-262VAR
2SK2446-01S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252VAR
2SK2446-L 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET
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