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參數資料
| 型號： | 2SK258H |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直| 8A條（丁）|至3 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 48K |
| 代理商： | 2SK258H |
2SK2553
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note 2
60
V
Gate to source voltage
±
20
V
Drain current
50
A
Drain peak current
Note 1
200
A
Body to drain diode reverse drain current
50
A
Avalanche current
Note 3
45
A
Avalanche energy
Note 3
174
mJ
Channel dissipation
75
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2591 | |
| 2SK2592 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK2593P | TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 1MA I(DSS) | SC-75A |
| 2SK2593Q | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK2593R | TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 5MA I(DSS) | SC-75A |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2590 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2590-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2591 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2592 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 13A I(D) | TO-262AA |
| 2SK2593 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET |
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