- 您現在的位置：買賣IC網 > PDF目錄357255 > 2SK260H Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset PDF資料下載
參數資料
| 型號： | 2SK260H |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 5A條（丁）|至3 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 48K |
| 代理商： | 2SK260H |
2SK2553
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A
V
GS
= 10 V
Note 1
I
D
= 25 A
V
GS
= 4 V
Note 1
I
D
= 25 A
V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
10
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
7
10
m
—
10
16
m
Forward transfer admittance
|y
fs
|
35
55
—
S
Input capacitance
Ciss
—
3550
—
pF
Output capacitance
Coss
—
1760
—
pF
Reverse transfer capacitance
Crss
—
500
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
35
—
ns
I
D
= 25 A
V
GS
= 10 V
R
L
= 1.2
Rise time
—
230
—
ns
Turn-off delay time
—
470
—
ns
Fall time
—
360
—
ns
Body to drain diode forward
voltage
—
0.85
—
V
I
F
= 50 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
135
—
ns
I
F
= 50 A, V
= 0
di
F
/ dt = 50 A /
μ
s
See characteristic curves of 2SK2529.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2833 | TERMINAL |
| 2SK2833-R | Power MOSFET |
| 2SK3151 | 0.025 ohm, POWER, FET |
| 2SK3591-01MR | N-CHANNEL SILICON POWER MOSFET |
| 2SK3591 | N-CHANNEL SILICON POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2610 | 功能描述:MOSFET N-CH 900V 5A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2610(F) | 制造商:Toshiba 功能描述:Nch 900V 5A 2.5@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 900V 5A 2.5@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-3PN |
| 2SK2610(F,T) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 5A 3PIN TO-3P(N) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 5A TO-3PN |
| 2SK2610 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
| 2SK2611 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET Transistor, N-Channel, TO-247VAR |
發布緊急采購，3分鐘左右您將得到回復。