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參數資料
型號: 2SK2631TP-FA
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號晶體管
英文描述: 1000 mA, 800 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數: 1/5頁
文件大小: 30K
代理商: 2SK2631TP-FA
2SK2631
No.6600-1/5
Features
Low ON resistance.
Smaller amount of total gate charge.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6600
2SK2631
Package Dimensions
unit : mm
2083B
unit : mm
2092B
[2SK2631]
63000 TS IM TA-3024
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3
Ultrahigh-Speed Switching Applications
[2SK2631]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
相關PDF資料
PDF描述
2SK2631TP-FA 1000 mA, 800 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2632LS 2.5 A, 800 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2680LS 6 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2685 UHF BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET
2SK2717 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
2SK2632LS 功能描述:MOSFET N-CH 800V 2.5A TO-220FI RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SK2638-01MRSC 制造商:Fuji Electric 功能描述:
2SK2640 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK2640-01MRSC 制造商:Fuji Electric 功能描述:
2SK2642-01MR 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.44Ohm;ID +/-15A;TO-220F15;PD 50W;VGS +/-3
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