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參數資料
| 型號： | 2SK2717 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 414K |
| 代理商： | 2SK2717 |
2SK2717
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2717
DCDC Converter and Motor Drive Applications
Low drainsource ON resistance
: RDS (ON) = 2.3 (typ.)
High forward transfer admittance
: |Yfs| = 4.4 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
900
V
Draingate voltage (RGS = 20 k)
VDGR
900
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
595
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2717(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SK2717(F,T) | 功能描述:MOSFET MOSFET N-Ch 900V 5A Rdson=2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2718 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 2.5A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2718(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 2.5A 3-Pin (3+Tab) TO-220(NIS) Bulk |
| 2SK2719 | 功能描述:MOSFET N-CH 900V 3A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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