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參數(shù)資料
| 型號： | 2SK2742 |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-7H1B, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 418K |
| 代理商： | 2SK2742 |
2SK2742
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2742
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.28 (typ.)
High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 100 V)
Enhancementmode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
3
Drain current
Pulse (Note 1)
IDP
12
A
Drain power dissipation
(Note 2)
PD
2.5
W
Single pulse avalanche energy
(Note 3)
EAS
140
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy (Note 4)
EAR
0.25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 25 mH, RG = 25 , IAR = 3 A
Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
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