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參數(shù)資料
| 型號(hào)： | 2SK2680LS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220FI(LS), 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 261K |
| 代理商： | 2SK2680LS |
2SK2680LS
No.8617-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-resistance.
High-speed diode.
Enables simplied fabrication, high-density mounting, and miniaturization in end products due to the surface
mountable package.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
250
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
6A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
24
A
Allowable Power Dissipation
PD
2.0
W
Tc=25°C25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
250
V
Gate-to-Source Breakdown Voltage
V(BR)GSS
IG=±100μA, VDS=0V
±
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0V
1.0
m
A
Gate-to-Source Leakage Current
IGSS
VGS=±25V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
3.0
V
Marking : K2680
Continued on next page.
Ordering number : EN8617
42209QA MS IM TC-00001897
SANYO Semiconductors
DATA SHEET
2SK2680LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
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| 2SK2682 | 制造商:Distributed By MCM 功能描述:1Ch 250W 13A 35W Gds Sanyo Fet Transistor TO-220Ab |
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