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參數資料
| 型號： | 2SK3072 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CP, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | 2SK3072 |
2SK3072
No.7224-1/4
Features
Ultrahigh-speed switching.
Low-voltage drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
450
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
30
mA
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
120
mA
Allowable Power Dissipation
PD
250
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=300A, VGS=0
450
V
Zero-Gate Voltage Drain Current
IDSS
VDS=360V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=±10V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=15mA
14
28
mS
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=15mA, VGS=10V
210
275
RDS(on)2
ID=15mA, VGS=4V
230
300
Input Capacitance
Ciss
VDS=20V, f=1MHz
20
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
5
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
25
ns
Rise Time
tr
See specified Test Circuit.
100
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
110
ns
Fall Time
tf
See specified Test Circuit.
1.2
s
Diode Forward Voltage
VSD
IS=30mA, VGS=0
1.2
V
Marking : HK
42004 TS IM TB-00000019 / 80902 TS IM TA-1670
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SK3072
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Ordering number : ENN7224A
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相關代理商/技術參數 |
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| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
| 2SK3074 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) |
| 2SK3074(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 30V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba 功能描述:Trans MOSFET N-CH 30V 1A 4-Pin (3+Tab) PW-Mini T/R 制造商:Toshiba America Electronic Components 功能描述:RF MOSFET N-Channel 30V 1A SOT89 |
| 2SK3074_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER |
| 2SK3074TE12LF | 制造商:Toshiba America Electronic Components 功能描述:MOSF RF N CH 30V 1A PW-MINI 制造商:Toshiba America Electronic Components 功能描述:Transistors RF MOSFET N-Ch Radio Freq 1A 3W 30V VDSS |
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