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參數(shù)資料
| 型號： | 2SK3078 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | 2-5K1D, SC-62, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 189K |
| 代理商： | 2SK3078 |
2SK3078
2007-11-01
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3078
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other use.Do
not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Output Power
: PO = 27.0 dBmW (Min.)
Gain
: GP = 12.5 dB (Min.)
Drain Efficiency
: ηD = 46% (Typ.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
10
V
Gate-Source Voltage
VGSS
5
V
Drain Current
ID
0.5
A
Power Dissipation
PD (Note 1)
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
45~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
Unit: mm
JEDEC
—
JEITA
SC62
TOSHIBA
25K1D
1
U
W
2
3
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Lot No.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3079A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3079 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3089(2-10S2B) | 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3089(2-10S2B) | 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3090(2-10S1B) | 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3078A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 2SK3078A(TE12L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 10V 0.5A 4-Pin (3+Tab) PW-Mini T/R |
| 2SK3078A_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications |
| 2SK3079A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
| 2SK3079A_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
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