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參數(shù)資料
| 型號： | 2SK3113 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 145K |
| 代理商： | 2SK3113 |
Data Sheet D13336EJ3V0DS
3
2SK3113
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
C
d
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature -
C
P
T
0
0
80
20
40
60
100
140
120
160
40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
5
15
25
35
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
Powe DsspaionLmted
100
μ
s
10
ms
100
ms
DC
1
ms
PW
=
10
μ
s
I
D(pulse)
I
D(DC)
T
= 25
C,
Single pulse
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
R
DSon
Lmted(a V
GS
=20V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
W
100 m
1
10
100
1000
10 m
1 m
100
μ
10
μ
100
10
1
0.1
0.01
R
th(ch-A)
= 125C/
W
R
th(ch-C)
= 6.25C/
W
Single pulse
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3113-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3114 | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3115 | Switching N-channel power MOS FET industrial use |
| 2SK3116 | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-S | SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3113-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO251 Bulk |
| 2SK3113B | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113B-S15-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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