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參數資料
| 型號： | 2SK3151 |
| 元件分類： | JFETs |
| 英文描述： | 0.025 ohm, POWER, FET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 3/10頁 |
| 文件大小： | 51K |
| 代理商： | 2SK3151 |
2SK3151
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
Zero gate voltege drain
current
—
—
10
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D
= 1mA, V
DS
= 10V
I
D
= 25A, V
GS
= 10V
Note4
I
D
= 25A, V
GS
= 4V
Note4
I
D
= 25A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
Static drain to source on state R
DS(on)
resistance
—
11.5
15
m
m
R
DS(on)
|y
fs
|
Ciss
—
16
25
Forward transfer admittance
30
50
—
S
Input capacitance
—
4000
—
pF
Output capacitance
Coss
—
1650
—
pF
Reverse transfer capacitance Crss
—
590
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
30
—
ns
I
D
= 25A, V
GS
= 10V
R
L
= 1.2
Rise time
—
280
—
ns
Turn-off delay time
—
830
—
ns
Fall time
—
450
—
ns
Body–drain diode forward
voltage
—
0.95
—
V
I
F
= 50A, V
GS
= 0
Body–drain diode reverse
recovery time
Note:
4. Pulse test
t
rr
—
100
—
V
I
= 50A, V
= 0
diF/ dt =50A/
μ
s
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3151(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3151-E | 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,100V,50A,11.5m ohm,TO-3P |
| 2SK3152 | 制造商:Renesas Electronics Corporation 功能描述:2SK3152 - Rail/Tube |
| 2SK3152-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220FM Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220FM |
| 2SK3153 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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