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參數(shù)資料
| 型號(hào)： | 2SK3342(2-7B1B) |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-7B1B, SC-64, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 156K |
| 代理商： | 2SK3342(2-7B1B) |
2SK3342
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3342
Switching Regulator Applications DCDC Converter, and
Motor Drive Applications
Low drainsource ON resistance
: RDS (ON) = 0.8 (typ.)
High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 250 V)
Enhancementmode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
4.5
A
Drain current
Pulse (Note 1)
IDP
18
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
51
mJ
Avalanche current
IAR
4.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 ,
IAR = 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK3348 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Switching |
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| 2SK334A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) |
| 2SK334B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 800UA I(DSS) |
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