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參數資料
| 型號： | 2SK3386-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 2SK3386-AZ |
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MOS FIELD EFFECT TRANSISTOR
2SK3386
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14471EJ3V0DS00 (3rd edition)
Date Published
August 2004 NS CP(K)
Printed in Japan
The mark
★ shows major revised points.
1999, 2000
DESCRIPTION
The 2SK3386 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-state Resistance
RDS(on)1 = 21 m
MAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 36 m
MAX. (VGS = 4.0 V, ID = 17 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±34
A
Drain Current (Pulse)
Note1
ID(pulse)
±120
A
Total Power Dissipation (TC = 25°C)
PT
40
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
28
A
Single Avalanche Energy
Note2
EAS
78
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3386
TO-251 (MP-3)
2SK3386-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
★
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| 2SK3388 | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK3399(2-10S2B) | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3386-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3386-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 34A 21m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252 |
| 2SK3386-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3387 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) |
| 2SK3387(TE24L,Q) | 功能描述:MOSFET N-ch 150V 18A 0.08 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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