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參數資料
型號: 2SK3475
廠商: Toshiba Corporation
英文描述: VHF-and UHF-band Amplifier Applications
中文描述: 甚高頻和超高頻波段放大器應用
文件頁數: 1/4頁
文件大小: 109K
代理商: 2SK3475
2SK3475
2002-01-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475
VHF- and UHF-band Amplifier Applications
Output power: P
O
= 630 mW (min)
Gain: G
P
= 14.9dB (min)
Drain efficiency:
η
D
= 45% (min)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Gain-source voltage
V
GSS
±5
V
Drain current
I
D
1
A
Power dissipation
P
D
(Note 1)
3
W
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
45~150
°C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Caution
Please take care to avoid generating static electricity when handling this transistor.
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1D
Type name
1
W B
2
3
1. Gate
2. Source
3. Drain
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