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參數資料
| 型號： | 2SK3476 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山類型 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SK3476 |
2SK3476
2002-01-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
Output power: P
O
= 7.0 W (min)
Gain: G
P
= 11.4dB (min)
Drain efficiency:
η
D
= 60% (min)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Gain-source voltage
V
GSS
±5
V
Drain current
I
D
3
A
Power dissipation
P
D
(Note 1)
20
W
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
45~150
°C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Caution
Please take care to avoid generating static electricity when handling this transistor.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-5N1A
Type name
1
UC
F
2
3
1. Gate
2. Source (heat sink)
3. Drain
**
Lo No.
Dot
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相關代理商/技術參數 |
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| 2SK3476_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications |
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