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參數資料
| 型號： | 2SK3511 |
| 元件分類： | JFETs |
| 英文描述： | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | 2SK3511 |
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confirm that this is the latest version.
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availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D15617EJ1V0DS00 (1st edition)
Date Published
May 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on) = 12.5 m
MAX. (VGS = 10 V, ID = 42 A)
Low Ciss: Ciss = 5900 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
75
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±83
A
Drain Current (pulse)
Note1
ID(pulse)
±260
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
52
A
Single Avalanche Energy
Note2
EAS
250
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25
, VGS = 20
→ 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3511
TO-220AB
2SK3511-S
TO-262
2SK3511-ZJ
TO-263
2SK3511-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
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| 2SK3526-01S | 8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3538 | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3541T2L | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3546G | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3549-01 | 10 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3514-01SC | 制造商:Fuji Electric 功能描述: |
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